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| SMD Type N-Channel 30-V (D-S) MOSFET KI9410DY MOSFET SOP-8 Features VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V) RDS(ON) 0.04 (VGS = 5V) RDS(ON) 0.05 (VGS = 4.5V) DDDD G N/C S S S S G N-Channel MOSFET Top View 1 2 3 4 8 7 6 5 D D D D Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* Pulsed Drain Current Continuous Source Current(Diode Conduction) * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* * Surface Mounted on 1" x 1" FR4 Board. t 10 sec TJ, Tstg RthJA TA = 25 TA = 70 IDM IS PD Symbol VDS VGS ID Limit 30 20 7.0 5.8 30 2.8 2.5 1.6 -55 to 150 50 Unit V A A A W /W www.kexin.com.cn 1 SMD Type KI9410DY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol VGS(th) IGSS IDSS Testconditons VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 On-State Drain Currentb * ID(on) VDS 5 V, VGS = 10 V VGS = 10 V, ID = 7 A Drain-Source On-State Resistance * rDS(on) VGS = 5 V, ID = 4 A VGS = 4.5 V, ID = 3.5 A Forward Transconductanceb * Diode Forward Voltageb * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2 A, di/dt = 100 A/s VDD = 25 V, RL = 25 ID = 1 A, VGEN = 10 V, RG = 6 VDS = 15 V, VGS = 10 V, ID = 7 A VDS = 15 V, ID = 7 A IS = 2 A, VGS = 0 V 30 Min 1.0 Typ MOSFET Max Unit V 100 2 25 nA A A 0.024 0.030 0.032 15 0.72 24 2.8 4.6 14 10 46 17 60 0.030 0.040 0.050 S 1.1 50 V nC 30 60 150 140 ns * Pulse test; pulse width 300 s, duty cycle 2%. www.kexin.com.cn 2 |
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